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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3794
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3794 2SK3794-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Low On-state resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A) * Low C iss: C iss = 760 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-252) (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 20 20 50 30 1.0 150 -55 to +150 15 23 23
V V A A W W C C A mJ mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2 Note3
IAS EAS EAR
Repetitive Avalanche Energy
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V 3. IAR 15 A, Tch 150C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16778EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2004
2SK3794
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VGS = 4.0 V, ID = 10 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 10 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 5
2.0 10 35 54 760 150 71 13 170 43 34
2.5
Drain to Source On-state Resistance
44 78
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V VGS = 10 V ID = 10 A IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/s
17 3.0 4.7 1.0 39 62
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D16778EJ2V0DS
2SK3794
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 35
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
100 80 60 40 20 0
30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
ID - Drain Current - A
100
RV (at
) (on DS GS
ited ) Lim 0 V = 1 ID(DC)
Po Lim wer DC ite Diss d ipa ti
ID(pulse)
10 ms
PW
1m
10
s
=1
0
0
s
s
10
on
1 TC = 25C 0.1 Single Pulse 0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 125 C/W 100
10 Rth(ch-C) = 4.17 C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D16778EJ2V0DS
3
2SK3794
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed 40
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
ID - Drain Current - A
100 TA = -55C 25C 75C 150C
30
VGS =10 V
10
20
4.0 V
1
10
0
0.1
0 1 2 3 4 VDS - Drain to Source Voltage - V
1
2
3
4
VDS = 10 V 5 6
VGS - Gate to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
10
1
TA = 150C 75C 25C -50C
0.1
-50
0
50
100
150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
80 Pulsed 70 60 50 40 30 20 10 0 0.1 1 10 100 VGS = 4.0 V 10 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V ID = 10 A
ID - Drain Current - A
4
Data Sheet D16778EJ2V0DS
2SK3794
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 120 100 80 60 40 20 0 -50 0 50 100 ID = 10 A 150 VGS = 4.0 V 10 V Pulsed
Ciss, Coss, Crss - Capacitance - pF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz
1000
Ciss
100
Coss Crss
10 0.1
1
10
100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS tr
VDS - Drain to Source Voltage - V
80
16 14
VGS - Gate to Source Voltage - V
tf 100 td(on)
60
VDD = 48 V 30 V 12 V
12 10 8 6
40
10
td(off)
20 VDS
VGS
4 2 ID = 20 A
1 0.1
1
10
100
0 0
4
8
12
16
20
24
28
32
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
IF - Diode Forward Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V
Pulsed VGS = 10 V
10 0V 1
100
10
0.1
0.01
0
0.5
1.0
1.5
1 0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Drain Foward Current - A
Data Sheet D16778EJ2V0DS
5
2SK3794
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140
VDD = 30 V RG = 25 VGS = 20 0 V IAS 15 A
IAS = 15 A 10
EAS =2 3m
120 100 80 60 40 20
J
1 VDD = 30 V RG = 25 VGS = 20 0 V 100 1m 10 m L - Inductive Load - H
0.1 10
0 25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16778EJ2V0DS
2SK3794
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5 -0.1
+0.2
5.0 0.2
1.6 0.2
0.5 0.1
0.8 4.3 MAX.
4
5.5 0.2 13.7 MIN.
6.5 0.2 5.0 0.2 4
1.5 -0.1
+0.2
6.5 0.2
2.3 0.2
2.3 0.2 0.5 0.1
1
2
3
7.0 MIN.
1
2
3
1.1 0.2
+0.2
0.5 -0.1
2.3 2.3
0.75
0.5 -0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.7
1.1 0.2
2.0 MIN.
5.5 0.2 10.0 MAX.
1.0 MIN. 1.8TYP.
Data Sheet D16778EJ2V0DS
7
2SK3794
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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